bsr92p sipmos ? small-signal-transistor features ? p-channel ? enhancement mode / logic level ? avalanche rated ? pb-free lead plating; rohs compliant ? footprint compatible to sot23 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c a t a =70 c pulsed drain current i d,pulse t a =25 c avalanche energy, single pulse e as i d =-0.14 a, r gs =25 ? mj gate source voltage v gs v power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c esd class jesd22-c101 (hbm) soldering temperature iec climatic category; din iec 68-1 55/150/56 -55 ... 150 20 260 c 1a (250v to 500v) -0.14 -0.11 0.5 value 24 -0.56 steady state v ds -250 v r ds(on),max 11 ? i d -0.14 a product summary type package tape and reel information marking lead free packing bsr92p pg-sc59 l6327 = 3000 pcs. / reel ld yes non dry pg-sc59 rev 1.0 page 1 2007-04-10
bsr92p parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - ambient r thja minimal footprint, steady state - - 250 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =-250 a -250 - - v gate threshold voltage v gs(th) v ds = v gs , i d =-130 a -2 -1.5 -1 zero gate voltage drain current i dss v ds =-250 v, v gs =0 v, t j =25 c - -0.1 -1 a v ds =-250 v, v gs =0 v, t j =150 c - -10 -100 gate-source leakage current i gss v gs =-20 v, v ds =0 v - -10 -100 na v gs =-2.8 v, i d =-0.025 a -1120 drain-source on-state resistance r ds(on) v gs =-4.5 v, i d =- 0.13 a -913 ? v gs =-10 v, i d =-0.14 a -811 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-0.11 a 0.1 0.3 - s values rev 1.0 page 2 2007-04-10
bsr92p parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 82 109 pf output capacitance c oss -1216 reverse transfer capacitance c rss -58 turn-on delay time t d(on) - 6.4 9.0 ns rise time t r - 6.3 9.0 turn-off delay time t d(off) - 75.0 112 fall time t f - 71.0 163 gate charge characteristics 2) gate to source charge q gs - -0.2 -0.3 nc gate to drain charge q gd - -1.2 -1.8 gate charge total q g - -3.6 -4.8 gate plateau voltage v plateau - -2.7 - v reverse diode diode continuous forward current i s - - -0.14 a diode pulse current i s,pulse - - -0.56 diode forward voltage v sd v gs =0 v, i f =0.14 a, t j =25 c - -0.8 -1.2 v reverse recovery time t rr -66-ns reverse recovery charge q rr - 125 - nc 2) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =-25 v, f =1 mhz v dd =-125 v, v gs =-10 v, i d =-0.14 a, r g =6 ? v dd =-200 v, i d =- 0.14 a, v gs =0 to -10 v v r =125 v, i f =| i s |, d i f /d t =100 a/s rev 1.0 page 3 2007-04-10
bsr92p 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); | v gs | 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 100 s 1 ms 10 ms 100 ms dc 10 3 10 2 10 1 10 0 10 -1 10 0 10 -1 10 -2 10 -3 -v ds [v] -i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 3 10 2 10 1 10 0 10 -1 t p [s] z thjs [k/w] 0 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 t a [c] p tot [w] 0 0.05 0.1 0.15 0 40 80 120 160 t a [c] -i d [a] rev 1.0 page 4 2007-04-10
bsr92p 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j -2.5 v -3 v -3.5 v -4.5 v -6 v -10 v 6 8 10 12 14 0 0.1 0.2 0.3 0.4 -i d [a] r ds(on) [ ? ] 25 c 150 c 0 0.1 0.2 0.3 0.4 0.5 01234 -v gs [v] -i d [a] 0 0.1 0.2 0.3 0.4 0.00 0.04 0.08 0.12 0.16 -i d [a] g fs [s] 2 v 2.5 v 3 v 3.5 v 4.5 v 6 v 10 v 0 0.1 0.2 0.3 0.4 0.5 012345 v ds [v] i d [a] rev 1.0 page 5 2007-04-10
bsr92p 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-0.14 a; v gs =-10 v v gs(th) =f( t j ); v gs = v ds ; i d =-130 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j ciss coss crss 1 10 100 1000 0 20406080100 -v ds [v] c [pf] 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 t j [c] -v gs(th) [v] max min typ 25 c 150 c 25c, 98% 150c, 98% 0.001 0.01 0.1 1 0 0.4 0.8 1.2 1.6 -v sd [v] i f [a] 10v 98% 0 5 10 15 20 25 30 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j [c] r ds(on) [m ? ] rev 1.0 page 6 2007-04-10
bsr92p 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =-0.14 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =-250 a 200 210 220 230 240 250 260 270 280 290 300 -60 -20 20 60 100 140 t j [c] -v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 0 10 -1 10 -2 t av [s] -i av [a] 50 v 125 v 200 v 0 2 4 6 8 10 0123 - q gate [nc] - v gs [v] rev 1.0 page 7 2007-04-10
bsr92p package outline: pg-sc-59 footprint: packaging: dimensions in mm pg-sc59 rev 1.0 page 8 2007-04-10
bsr92p published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ll rights reserved. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions o characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typica values stated herein and/or any information regarding the appli cation of the device, infineon technologie s hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third p arty information for further information on technology, delivery terms and condi tions and prices please contact your neares infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the type s in question please contact your nearest infineon technologies o ffice . infineon technologies components may only be used in life-suppo rt devices or systems with the expres s written approval of infineon technologies, if a failure of suc h components can reasonably be expected t o cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be impl anted in the human body, or to support and/o r maintain and sustain and/or protect human life. if they fail, i t is reasonable to assume that the health of th e user or other persons may be endangered . rev 1.0 page 9 2007-04-10
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